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Investigation on stress-induced effect of luminescence properties of blue/violet LEDs

CHE YUANG1, WANG DANGHUI1,* , ZHANG LINGKUN1, YUAN TIANHAO1, ZHANG MENGFAN1, ZHANG SHUYAN1, GUO YUYANG1, WU YUHAO1, CAO XIYUE1

Affiliation

  1. College of New Energy of Xi’an Shiyou University, Xi’an 710065, China

Abstract

Nowadays, III-nitride MQW blue/violet light-emitting diodes (LEDs) exhibit exemplary characteristics in a multitude of applications, including high-brightness illumination, white light generation, full-color display, water purification, and ultraviolet identification technology. In this study, the residual stress/strain existed in the active region of the bandgap, luminescence properties, and electrical properties of violet (AlGaN/GaN) and blue (InGaN/GaN) light-emitting diodes (LEDs) using the APSYS software. The findings suggest that there is a sensitive stress-dependent relationship between the bandgap, carrier concentration, optical output power and threshold voltage and stress/strain. As stress/strain increases, blue/violet LED devices exhibit band tilt, a reduction in carrier concentration, optical output power attenuation, an expansion of the band gap width and an elevation in threshold voltage. In comparison to the blue LED, the violet LED is more susceptible to the effects of stress on its luminous properties. The findings offer a foundation for further investigation into the optimisation and enhancement of the luminous and electrical properties of short-wave LEDs through the modulation of stress..

Keywords

Blue/violet LED, Multiple quantum wells, Stress, Optoelectronic properties.

Submitted at: March 6, 2024
Accepted at: Oct. 7, 2024

Citation

CHE YUANG, WANG DANGHUI, ZHANG LINGKUN, YUAN TIANHAO, ZHANG MENGFAN, ZHANG SHUYAN, GUO YUYANG, WU YUHAO, CAO XIYUE, Investigation on stress-induced effect of luminescence properties of blue/violet LEDs, Journal of Optoelectronics and Advanced Materials Vol. 26, Iss. 9-10, pp. 399-404 (2024)