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Investigations of microstructural evolutions after rapid thermal annealing of phosphorus doped ZnO films grown by pulsed laser deposition

J. H. JANG1, H. S. KIM2, D. P. NORTON1, V. CRACIUN1,3,*

Affiliation

  1. Department of Materials Science and Engineering, University of Florida, Box 116400, Gainesville, FL 32611
  2. Oak Ridge National Laboratory, Box 2008 MS6056, Oak Ridge, TN 37831
  3. Laser Department, National Institute for Laser, Plasma, and Radiation Physics, Bucharest, Romania

Abstract

The microstructure of as-deposited and rapid thermal annealed (RTA) P-doped ZnO films grown by pulsed laser deposition (PLD) on c-plane sapphire substrates was investigated. Omega rocking curve (ω-RC) and pole figure investigations showed that the degree of texture and crystalline quality of films decreased with increasing phosphorus concentration. X-ray diffraction line profile analysis (LPA) and Warren–Averbach analysis showed that 0.5 at % P-doped ZnO film presented much higher microstrain values than 1.0 at % P-doped ZnO films, which indicated that phosphorus atoms are no longer incorporated into the ZnO lattice for such concentrations. After RTA at 900 o C for 3 min, the FWHM values of ω-RCs markedly decreased, indicating a significant improvement of crystallinity. In addition, the change of the conduction type from n to p simultaneously with a decrease of strain suggested that P atoms were incorporated back into the ZnO lattice..

Keywords

Laser ablation, ZnO, Microstructure.

Submitted at: June 19, 2009
Accepted at: Feb. 27, 2010

Citation

J. H. JANG, H. S. KIM, D. P. NORTON, V. CRACIUN, Investigations of microstructural evolutions after rapid thermal annealing of phosphorus doped ZnO films grown by pulsed laser deposition, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 3, pp. 535-537 (2010)