Cookies ussage consent
Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.I agree, do not show this message again.
S. MOLNAR1,* , R. BOHDAN1, V. TAKATS2, YU. KAGANOVSKII3, K. VAD2, S. KOKENYESI1
- Institute of Physics, University of Debrecen, Bem Sq. 18/a, 4026 Debrecen, Hungary
- Institute of Nuclear Research, Hungarian Academy of Sciences, Bem Sq. 18/c, 4026 Debrecen, Hungary
- Dept. of Physics, Bar-Ilan University, Ramat-Gan 52900, Israel
Photo-darkening (PD) and surface relief (SR) recording is applicable for fabrication of photonic elements in amorphous chalcogenides. While SR in As20Se80 layers was found very efficient, the influence of PD on recording and thermal stability need to be established. Thermally activated transient and reversible components of PD were detected. From temperature dependent characteristic times of recording and erasing for both PD components rather low activation energies (17 and 13 meV) for the recording process and high activation energies (210 and 90 meV) for erasing were determined. The mechanisms of relevant processes and stability of optical relief recording are discussed..
Amorphous chalcogenides, Optical recording, Photo-darkening, Temperature dependence, Activation energy.
Submitted at: April 17, 2018
Accepted at: Nov. 29, 2018
S. MOLNAR, R. BOHDAN, V. TAKATS, YU. KAGANOVSKII, K. VAD, S. KOKENYESI, Kinetics of photo-darkening and -bleaching in amorphous As20Se80 layers: temperature dependence, Journal of Optoelectronics and Advanced Materials Vol. 20, Iss. 11-12, pp. 646-650 (2018)
- Download Fulltext
- Downloads: 76 (from 52 distinct Internet Addresses ).