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Kink-free L-I and low threshold current of violet InGaN laser diode due to optimization of the barrier thickness and type

R. A. ABDULLAH1,* , K. IBRAHIM1

Affiliation

  1. Nano-Optoelectronics Research and Technology Laboratory (N.O.R) School of Physics, Universiti Sains Malaysia,11800 Penang, Malaysia

Abstract

The effects of the barrier thickness and type on the threshold current and I-L curve shape of violet InGaN laser diode (LD) have numerically been investigated. The simulation result indicated that the thickness of the barrier layer plays an important role in determining the threshold current as well as the output power of the LD. The lowest threshold current has been obtained with the lowest barrier thickness, exactly equal to 4 nm. On the other hand, simulation result indicated that the thinner barrier leads to the appearance of the kink in I-L curve due to increase in the polarization at the barriers/wells interfaces. By using GaN barrier layer instead of InGaN barrier layer, the polarization increased at the barriers/wells interfaces leading to the appearance of the kink in the I-L curve..

Keywords

InGaN, Laser diode, Barrier Thickness, Threshold current.

Submitted at: March 28, 2010
Accepted at: May 26, 2010

Citation

R. A. ABDULLAH, K. IBRAHIM, Kink-free L-I and low threshold current of violet InGaN laser diode due to optimization of the barrier thickness and type, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 5, pp. 1000-1003 (2010)