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Lanthanide ion incorporation in gallium nitride through a salt melt process

FAIZ RAHMAN1,*

Affiliation

  1. Department of Electronics and Electrical Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT, United Kingdom

Abstract

Lanthanide ions have been doped in epitaxial gallium nitride material through a liquid phase salt melt process. The technique involves a brief photolytic etching of the sample surface followed by heating with a melt of a selected lanthanide halide under reducing conditions. In this work, hydrogen sulphide entrained in nitrogen gas was used to produce the reducing ambient. Europium-doped GaN pumped with above-gap UV radiation showed strong red emission. The temperature dependence of the intensity of this red emission is also described. Neodymium caused surface pitting and consequent enhancement of defect-generated yellow luminescence. Doping with cerium resulted in a diffuse broadband ultraviolet emission but no specific emission lines..

Keywords

Gallium nitride, Thermal doping, Lanthanide ions, Rare earths, Salt melt.

Submitted at: Feb. 6, 2009
Accepted at: March 24, 2009

Citation

FAIZ RAHMAN, Lanthanide ion incorporation in gallium nitride through a salt melt process, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 3, pp. 326-330 (2009)