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Laser induced carrier heating effects on real and imaginary parts of Raman susceptibility of weakly-polar semiconductor magneto-plasmas

GOPAL1,* , B.S. SHARMA1, MANJEET SINGH2

Affiliation

  1. Department of Physics, Lords University, Chikani, Alwar-301028, India
  2. Department of Physics, Government College, Matanhail, Jhajjar – 124106, India

Abstract

In this paper, we develop a mathematical model to study the effects of carrier heating induced by a laser beam on Raman susceptibility of weakly-polar semiconductor magneto-plasmas. We obtain expressions for the real and imaginary parts of Raman susceptibility ( , ) using coupled mode approach under hydrodynamic and rotating-wave approximations. In order to validate the results, we perform mathematical calculations for n-InSb crystal - CO2 laser system chosen as a representative weakly-polar semiconductor – laser system. We observed change of sign of as well as around resonances. The carrier heating induced by the intense laser beam changes the momentum transfer collision frequency of plasma carriers and consequently the Raman susceptibility of the semiconductor magneto-plasma, which subsequently enhances and , (ii) shifts the enhanced and towards smaller values of applied magnetic field, and (iii) broadens the applied magnetic field regime at which change of sign of and are observed. The analysis leads to better understanding of Raman nonlinearity of semiconductor plasma and suggests an idea of development of Raman nonlinearity based optoelectronic devices..

Keywords

Laser-plasma interaction, Carrier heating, Raman susceptibility, Semiconductors-plasmas.

Submitted at: Jan. 10, 2022
Accepted at: Dec. 6, 2022

Citation

GOPAL, B.S. SHARMA, MANJEET SINGH, Laser induced carrier heating effects on real and imaginary parts of Raman susceptibility of weakly-polar semiconductor magneto-plasmas, Journal of Optoelectronics and Advanced Materials Vol. 24, Iss. 11-12, pp. 584-593 (2022)