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Laser-induced damage threshold at different wavelengths of Ta2O5 films of wide-range temperature annealing

CHENG XU1,* , YINGHUAI QIANG1, YABO ZHU1, JIANDA SHAO2, ZHENGXIU FAN2

Affiliation

  1. School of Materials Science and Engineering, China University of Mining and Technology, Jiangsu 221116, China
  2. Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

Abstract

The laser-induced damage of Ta2O5 films annealed at wide-range temperature (473-1273 K) at the laser wavelengths of 1064 nm and 355 nm was investigated. The relations among microstructure, optical properties, absorption, chemical composition and laser-induced damage threshold (LIDT) at different wavelengths were researched. The dependence of damage mechanism on laser wavelength was discussed. It was found that both the LIDT increases firstly and then decreases with the increase of annealing temperature either at 1064 nm or 355 nm. The LIDT at 1064 nm was influenced mainly by the substoichiometric defect, structural defect and thermal diffusion, whereas at 355 nm it was influenced more significantly by the intrinsic absorption and structural defect. Both the maximum LIDT at the two wavelengths was achieved at the annealing temperature of 873 K, which could be attributed to the lowest defect density in the films..

Keywords

Ta2O5 films, Annealing, Laser-induced damage threshold, Absorption.

Submitted at: May 17, 2009
Accepted at: June 28, 2009

Citation

CHENG XU, YINGHUAI QIANG, YABO ZHU, JIANDA SHAO, ZHENGXIU FAN, Laser-induced damage threshold at different wavelengths of Ta2O5 films of wide-range temperature annealing, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 6, pp. 863-869 (2009)