"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Light induced morphological processing of chalcogenide films

U. GERTNERS1,* , M. REINFELDE1, J. TETERIS1

Affiliation

  1. Institute of Solid State Physics, University of Latvia, 8 Kengaraga Street, LV1063 Riga, Latvia

Abstract

The study of direct recording of the surface relief gratings on amorphous chalcogenide thin films is presented. Direct patterning was performed on As2S3 by 532 nm wavelength laser light using a 10 The evolution of a surface relief in dependence from the recording time and polarization has been investigated in detail. It has been shown that the formation of surface relief grating closely depends on the superposition of electric field of the gradient beam and supplemental beam, thus the mass transfer can be directed both ways – towards or away from the electric field intensity gradient..

Keywords

Electric field, Surface relief, Polarization.

Submitted at: Nov. 2, 2015
Accepted at: Feb. 10, 2016

Citation

U. GERTNERS, M. REINFELDE, J. TETERIS, Light induced morphological processing of chalcogenide films, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 1-2, pp. 24-28 (2016)