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Light intensity and its polarization relation to the photoinduced mass movement in thin layers of chalcogenide vitreous semiconductors

U. GERTNERS1,* , J. TETERIS1

Affiliation

  1. Institute of Solid State Physics, University of Latvia, 8 Kengaraga Street, LV1063 Riga, Latvia

Abstract

This work is devoted to the topical issue– photo-induced formation of surface relief gratings (SRG) in thin layers of chalcogenide vitreous semiconductors (ChVS).This direct surface-relief formation during light illumination phenomenon is being discussed with special attention focused on the polarization and intensity of the corresponding light. Holographic recording setup and illumination through adjustable optical slit are used and theoretical model for light interference pattern has been built. We have showed that the efficiency of the surface relief formation strongly depends not only on the writing beam properties but also on the assisting beam. Also SRG formation and mass transfer processes which are based on the photo-induced plasticity on As2S3 are discussed in this paper..

Keywords

Amorphous chalcogenide films, Holographic recording, Electric field, Surface relief, Polarization.

Submitted at: June 2, 2011
Accepted at: Nov. 23, 2011

Citation

U. GERTNERS, J. TETERIS, Light intensity and its polarization relation to the photoinduced mass movement in thin layers of chalcogenide vitreous semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1462-1466 (2011)