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Low frequency noise as a tool for diagnostic of ESD degraded GaAs mesfets

M. M. JEVTIĆ1,* , J. HADŽI-VUKOVIĆ2

Affiliation

  1. Institute of Physics, Pregrevica 118, 11080 Belgrade, Serbia
  2. Infineon Technologies Austria, Siemensstrasse 2, 9500 Villach Austria

Abstract

In order to investigate degradation under ESD handling condition, commercial GaAs MESFET’s were stressed with high voltage pulses of 0.7 to 3 kV applied to the gate or to the drain in an ESD experiment using standard ESD simulator test (Human Body Model - HBM). MESFET degradations were identified by I-V characteristics changes and low frequency (LF) noise measurements used as a tool for degradation diagnostic. Two modes of degradation: drain current increase (CI) and drain current decrease (CD) were observed. LF noise results have shown that most of the degradation originate by defects generated during ESD stress in space charge region of Schottky gate contact..

Keywords

GaAs MESFET, Low frequency noise, Electrostatic discharge (ESD).

Submitted at: Jan. 13, 2009
Accepted at: Feb. 24, 2009

Citation

M. M. JEVTIĆ, J. HADŽI-VUKOVIĆ, Low frequency noise as a tool for diagnostic of ESD degraded GaAs mesfets, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 2, pp. 155-163 (2009)