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Low temperature processing of 1-aminoanthracene films for optoelectronic applications

SUKHWINDER SINGH BRAR1, DINESH PATHAK1,* , AMAN MAHAJAN1, R. K. BEDI1

Affiliation

  1. Material Science Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar-143005, India

Abstract

The development of low-cost electronics for flat-panel displays, sensor arrays and flexible circuitry depends heavily on highthroughput fabrication processes and a choice of materials with appropriate performance characteristics. The solution processing schemes with high performance has been developed, but these require high annealing temperatures, which are incompatible with flexible polymeric materials and substrates. Here we report the low temperature processing of highly crystalline thin layers of 1-aminoanthracene compound onto the glass substrate using hot wall technique. These films have been studied for their structural, optical and electrical properties. X-ray diffraction and atomic force microscopy investigations on these films indicate their crystalline nature. Analysis of the optical absorption measurements indicate that interband transition energies lies in the range of 3.86-3.98 eV. Photoluminescence measurements on these films show prominent green emission peak. Room temperature conductivity of these films suggests their semiconductor behaviour with activation energy in the range 0.48- 0.55 eV..

Keywords

Thin Films; Organic Semiconductor; Electrical properties; Structural and Optical Properties.

Submitted at: Oct. 21, 2011
Accepted at: July 19, 2012

Citation

SUKHWINDER SINGH BRAR, DINESH PATHAK, AMAN MAHAJAN, R. K. BEDI, Low temperature processing of 1-aminoanthracene films for optoelectronic applications, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 7-8, pp. 613-618 (2012)