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Magnetoresistance sensors with magnetic layers for high sensitivity measurements

M. VOLMER1,* , J. NEAMTU2, M. AVRAM3

Affiliation

  1. Physics Department, Transilvania University, 29 Eroilor, Brasov 500036, Romania
  2. Advanced Research Institute for Electrical Engineering, Splaiul Unirii 313, Bucharest, 030138, Romania
  3. National Institute for Research and Development in Microtechnologies, Str. Erou Iancu Nicolae 32B, 72996 Bucharest, Romania

Abstract

In this study we present an overview of the sensors made from magnetic layers and nanostructured systems. Fundamental and technological aspects are presented. A review of the spin valve mechanism is presented. A spin valve device consists of two ferromagnetic layers, separated by a Cu spacer. When the Cu layer is replaced by a thin insulator layer (Al2O3) then, we have a magnetic tunnel junction or, for some deposition conditions, a nanogranular system. Electrical and magnetic characterization of the magnetic layers and nanogranular systems plays an important role in the designing process of these sensors and some results are presented in this paper. For a better understanding of the magnetization processes that take place in these systems, micromagnetic simulations were performed as well. Finally, we present a method to increase the response quality of a rotation sensor based on the anisotropic magnetoresistance effect and a detection system of the magnetic particles employed in biology as markers or as carriers for targeted drug delivery..

Keywords

Thin films, Magnetoresistance effect, Magnetic sensors, Micromagnetic simulation.

Submitted at: Sept. 25, 2007
Accepted at: Jan. 18, 2008

Citation

M. VOLMER, J. NEAMTU, M. AVRAM, Magnetoresistance sensors with magnetic layers for high sensitivity measurements, Journal of Optoelectronics and Advanced Materials Vol. 10, Iss. 1, pp. 104-109 (2008)