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Matrix-assisted photo-amorphization effect in As40S30Se30 films with silver

M. POPESCU1,* , K. PETKOV2, F. SAVA1, J. TASEEVA2, A. LŐRINCZI1, A. VELEA1

Affiliation

  1. National Institute of Materials Physics, 077125-Bucharest-Magurele, Ilfov, Atomistilor str. 1, P. O. Box MG. 7, Romania
  2. Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev St., bl. 109, 1113 Sofia, Bulgaria

Abstract

Matrix assisted photo-amorphization effect has been observed in thin chalcogenide films of composition As40S30Se30 deposited by thermal evaporation on silicon wafer substrate covered by silver. The initial films contain Ag2S and Ag4SeS crystallites embedded in an amorphous matrix. Illumination by a cold light halogen lamp induces the disappearance of the crystalline fraction and leads to significant changes in the diffraction pattern of the amorphous films..

Keywords

Chalcogenides, Silver doped, As-S-Se, Photo-amorphization, XRD.

Submitted at: July 5, 2009
Accepted at: Dec. 10, 2009

Citation

M. POPESCU, K. PETKOV, F. SAVA, J. TASEEVA, A. LŐRINCZI, A. VELEA, Matrix-assisted photo-amorphization effect in As40S30Se30 films with silver, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 12, pp. 2000-2003 (2009)