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Mechanical stability of (GeTe4)100-xGax and (GeTe5)100-xGax phase change thin films

P. PETKOV1,* , C. POPOV2, T. PETKOVA3, E. PETKOV1,2, J. P. REITHMAIER2

Affiliation

  1. Department of Physics, University of Chemical Technology and Metallurgy, 8 “Kl. Ohridski” blvd., 1756 Sofia, Bulgaria
  2. University of Kassel, Institute of Nanostructure Technologies and Analytics (INA) , Heinrich-Plett-Str. 40, 34132 Kassel, Germany
  3. Institute of Electrochemistry & Energy Systems, Bulgarian Academy of Sciences, Acad. G.Bonchev Bl.10, 1113 Sofia, Bulgaria

Abstract

Thin chalcogenide films from the (GeTe4)100-xGax and (GeTe5)100-xGax systems (x = 0 - 20 mol%) were deposited by vacuum evaporation from the corresponding bulk materials on different substrates which allowed their characterization by various techniques with respect to the structure, composition and topography. The stress in the films was measured by cantilever bending method. It was found that the Ge-Te-Ga films are under tensile stress which is higher for the films with higher Te content. The origin of the tensile stress could be sought in the difference of the atomic radii of the elements constituting the structural units of the glass..

Keywords

Ge-Te-Ga glasses, Thin films, Mechanical stability.

Submitted at: April 4, 2011
Accepted at: April 11, 2011

Citation

P. PETKOV, C. POPOV, T. PETKOVA, E. PETKOV, J. P. REITHMAIER, Mechanical stability of (GeTe4)100-xGax and (GeTe5)100-xGax phase change thin films, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 4, pp. 366-370 (2011)