"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Memory characteristics of Ni-NiOx core-shell nanocrystals embedded in SiO2 gate oxide for nonvolatile flash devices

H. NI1,* , L. WU2, Z. SONG2, C. HHUI3

Affiliation

  1. Research Institute of Micro/Nano Science and Technology, Shanghai Jiaotong University, P Shanghai 200030, China
  2. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China
  3. College of Life Science Biotechnology, Shanghai Jiaotong University, Shanghai 200030, China

Abstract

The memory characteristics of Ni-NiOx core-shell nanocrystals (NCs) in the metal-oxide-semiconductor (MOS) capacitor structure were investigated. Scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM) confirm the formation of the spherically shaped, well isolated, and uniformly distributed Ni NCs surrounded by NiOx (1-1.5nm) in MOS capacitor. The Ni-NiOx NCs in MOS capacitor exhibited a large memory window of 10.6 V as well as efficient programming/erasing speeds and better retention characteristics. A possible band model needed for injection efficiency of carriers was given by considering the electron/hole barrier width and the additional interface states through the NiOx shell..

Keywords

Ni-NiO, SiO2 gate oxide, Nanocrystal, Flash memory.

Submitted at: May 31, 2010
Accepted at: June 16, 2010

Citation

H. NI, L. WU, Z. SONG, C. HHUI, Memory characteristics of Ni-NiOx core-shell nanocrystals embedded in SiO2 gate oxide for nonvolatile flash devices, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 6, pp. 1306-1310 (2010)