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Metal/p-InSe:Mn Schottky Barrier Diodes

S.DUMAN1,* , Z. ELKOCA1, B. GURBULAK1, T. BAHTIYARI TEKLE1, S. DOGAN1

Affiliation

  1. Department of Physics, Faculty of Sciences, Atatürk University, 25240, Erzurum, Turkey

Abstract

In this study, we have reported a study of a number of metal/p-type InSe:Mn (Al, Au, Au-Be, Au-Ge, Au-Zn, Cd, Co, Mn, Sb, Sn and Zn) Schottky barrier diodes (SBDs). The barrier height (BH) and ideality factor (n) values for the metal/p-InSe:Mn SBDs have been obtained from their I–V characteristics at the room temperature. At high currents in the forward direction, the series resistance effect has been observed. The value of series resistance has been determined from I–V measurements using Cheung’s functions..

Keywords

Layered semiconductors; InSe; Schottky diode; Barrier height.

Submitted at: Oct. 6, 2011
Accepted at: July 19, 2012

Citation

S.DUMAN, Z. ELKOCA, B. GURBULAK, T. BAHTIYARI TEKLE, S. DOGAN, Metal/p-InSe:Mn Schottky Barrier Diodes, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 7-8, pp. 693-698 (2012)