Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Modeling Cd-free buffer layer and defects analysis in CZTS solar cell



  1. Department of Electrical Engineering, Indian Institute of Technology, Patna-801103, Bihar, India


A compact numerical evaluation and optimization for CZTS (Cu2ZnSnS4) solar cell has been done using device simulation software. Various factors affecting the solar cell’s performance has been rigorously investigated; more specifically physical parameters of buffer and absorber layer. By optimizing the device parameters we have achieved a simulated conversion efficiency of 15.6% with open circuit voltage (Voc) = 0.8V, short circuit current density (Jsc) = 26.4 mA/cm2 and a fill factor (FF) = 79.7%. The role of defect density has been also studied to analyze the performance of cell module and comparative analysis with alternative buffer material (ZnIn2Se4) has also been discussed. The solar cell with an absorber layer’s thickness of 2 μm, an acceptor concentration of 1×1016 cm-3 and buffer layer’s thickness of 70nm was optimum. Compared to one of the best-reported values of conversion efficiency from CdS based CZTS films available in the literature, we have obtained improved performance parameters of the cell module. The optimization of device parameters outperforms most experimental devices by a large margin, indicating that there may possibly be huge potential for the improvement for conversion efficiency of CZTS solar cell..


CZTS solar cell, Conversion efficiency, Energy band, MgZnO, ZnIn2Se4.

Submitted at: Oct. 8, 2013
Accepted at: Aug. 3, 2016


SAURABH KUMAR PANDEY, Modeling Cd-free buffer layer and defects analysis in CZTS solar cell, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 7-8, pp. 625-631 (2016)