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Modeling of carriers mobility impact on CNT FET current-voltage characteristics

P. M. LUKIĆ1,* , R. M. ŠAŠIĆ2

Affiliation

  1. University of Belgrade, Faculty of Mechanical Engineering, Serbia
  2. University of Belgrade, Faculty of Technology and Metallurgy, Serbia

Abstract

In this paper, field effect transistor with active area made of carbon nano tubes (CNT FET), is investigated. At the beginning, CNT characteristics, structure and possibilities of their implementation as a FET channel, are presented. The new model of CNT FET current-voltage characteristics is developed and presented. In the model, capacitances of all interfaces are included. Special segment of this model is carrier’s mobility model. Modeling of carrier’s mobility is exposed. Two different carriers’ mobility models are presented: analytical model that is developed and proposed and empirical model that is introduced. All models are modular and relatively simple. The results obtained by using proposed models are in very good agreement with already known ones..

Keywords

CNT FET, Carriers mobility, Current - voltage characteristics, Analytical model.

Submitted at: April 4, 2014
Accepted at: Nov. 13, 2014

Citation

P. M. LUKIĆ, R. M. ŠAŠIĆ, Modeling of carriers mobility impact on CNT FET current-voltage characteristics, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 11-12, pp. 1418-1424 (2014)