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Modeling of plasmon mode supported at uniaxial chiral indium tin oxide (ITO) interface

BADER ALHASSON1, MUHAMMAD UMAIR2,* , FAWWAZ HAZZAZI1

Affiliation

  1. Department of Electrical Engineering, College of Engineering in Al-Kharj, Prince Sattam bin Abdulaziz University, Al Kharj 11492, Saudi Arabia
  2. Department of Physics, University of Agriculture, Faisalabad 38000, Pakistan

Abstract

We theoretically investigate the dispersion and attenuation characteristics of plasmonic modes supported at uniaxial chiral (UAC)-indium tin oxide (ITO) in the THz frequency regime. The analysis considers two different cases for UAC to elucidate the influence of carrier density and the chirality on different characteristics of EM surface waves. The dispersion relation is derived by using the matrix technique transfer to analyze the effective mode index, propagation loss, and normalized phase velocity as functions of THz frequency. It is reported that increasing carrier density and chirality significantly enhances the confinement of the plasmon mode and reduces propagation loss. Furthermore, normalized phase velocity can also be tuned by tuning the number density and chirality parameter for both cases. In case I, a clear trade-off between confinement and loss is observed across a broad terahertz range, whereas case II exhibits a unique low frequency plasmon mode with strong tunability through both parameters. It is reported that variation of number density and chirality can be exploited for near-field communication devices, modulators, and sensors designing in THz frequency region..

Keywords

Plasmon mode, Uniaxial chiral, Effective mode index, Attenuation, Indium tin oxide (ITO).

Submitted at: Oct. 29, 2025
Accepted at: Oct. 5, 2026

Citation

BADER ALHASSON, MUHAMMAD UMAIR, FAWWAZ HAZZAZI, Modeling of plasmon mode supported at uniaxial chiral indium tin oxide (ITO) interface, Journal of Optoelectronics and Advanced Materials Vol. 28, Iss. 9-10, pp. 497-503 (2026)