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Monte Carlo analysis of electron transport in GaInAsSb material

A. A. EL OUCHDI1,* , Y. BELHADJI2, I. CHIALI3, N. TAHIR1, I. ABDELLAOUI4

Affiliation

  1. Division Microélectronique et Nanotechnologies, Centre de Développement des Technologies Avancées, Algiers, Algeria
  2. Electrical and Engineering Department, Faculty of Applied Sciences, University of Tiaret, Tiaret, Algeria
  3. Electrical Engineering and Industrial Computing Department, National School of Advanced Technology, Algiers, Algeria
  4. Division Milieux Ionisés et Laser, Centre de Développement des Technologies Avancées, Algiers, Algeria

Abstract

This work presents the results of the ensemble Monte Carlo simulation of electron transport in GaInAsSb material with a stoichiometric coefficient of 0.5. The study focuses on the electrons' behaviour across the three lowest valleys of the conduction band , L, and X considered isotropic and non-parabolic. The main goal is to track the electron trajectories under varying electric fields and temperatures. The dominant scattering mechanisms considered include acoustic and polar optical phonon, as well as inter-valley and intra-valley interactions. The results indicate that both temperature and electric field significantly influence the electronic drift velocity in stationary and transient regimes..

Keywords

Monte Carlo method, III-V materials, GaInAsSb material, Electronic Transport.

Submitted at: Nov. 23, 2022
Accepted at: Oct. 7, 2024

Citation

A. A. EL OUCHDI, Y. BELHADJI, I. CHIALI, N. TAHIR, I. ABDELLAOUI, Monte Carlo analysis of electron transport in GaInAsSb material, Journal of Optoelectronics and Advanced Materials Vol. 26, Iss. 9-10, pp. 405-412 (2024)