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Multiphonon tunnel ionization of negative-U centers – the origin of switching and memory effects in chalcogenide glasses

N. A. BOGOSLOVSKIY1,* , K. D. TSENDIN1

Affiliation

  1. Ioffe Physical-Technical Institute, Russian Academy of Sciences, St. Petersburg 194021 Russia

Abstract

An electronic-thermal model of switching in chalcogenide glassy semiconductors is presented. Calculations show that multiphonon tunnel ionization of negative-U centers in strong electric field cause a strong nonlinearity of the current-voltage characteristic. Joule heating cause an electronic-thermal instability, that results in formation of an S-shaped current-voltage characteristic. The multiphonon tunnel ionization model is in good agreement with the experimental data on chalcogenide glassy semiconductors in strong electric field..

Keywords

Switching, Memory effect, Chalcogenide glasses.

Submitted at: Nov. 1, 2011
Accepted at: Nov. 23, 2011

Citation

N. A. BOGOSLOVSKIY, K. D. TSENDIN, Multiphonon tunnel ionization of negative-U centers – the origin of switching and memory effects in chalcogenide glasses, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1423-1428 (2011)