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n β FeSi 2 /p Si h eterojunction solar c ells s imulation by AFORS HET

W. Y. XU1, F. X. CHEN1,* , J. F. WANG1

Affiliation

  1. Department of physics science and technology, Wuhan University of Technology, Wuhan, 430070, China

Abstract

The semiconducting iron disilicide β FeSi 2 has rece ntly attracted considerable attention due to its remarkable optical and electrical properties. In this paper, we investigate the β FeSi 2 /c Si(p)/µc Si(p ++) heterojunction solar cells and optimize its structure by AFORS HET software. By adjusting the emitter and back surface field (BSF) parameters, we find that increment of the emitter thickness would decrease the short current density and the conversion efficiency the influence of the interface state could not be ignored ; an optimized BSF will increase 1 po int of conversion efficiency. The final optimized parameters of heterojunction solar cell are V oc =600.8 mV, J sc =40.81 mA/cm 2 FF=80.77% and η=19.8%..

Keywords

FeSi2, Heterojunction solar cell, AFORS HET.

Submitted at: Jan. 15, 2013
Accepted at: March 13, 2014

Citation

W. Y. XU, F. X. CHEN, J. F. WANG, n β FeSi 2 /p Si h eterojunction solar c ells s imulation by AFORS HET, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 3-4, pp. 494-498 (2014)