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I agree, do not show this message again.Nano-sized silicon oxide, thermally grown on plasma hydrogenated silicon♣
S. ALEXANDROVA1,* , A. SZEKERES2
Affiliation
- Department of Applied Physics, Technical University, 8 Kl. Ohridski Blvd., 1797 Sofia, Bulgaria
- Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
Abstract
Oxide layers (~10 nm) grown on rf plasma hydrogenated (100) and (111)Si by thermal oxidation at 850oC are studied using C-V and G-V measurement techniques, spectroscopic ellipsometry and atomic force microscopy. Analysis of the G-V curves revealed the interface traps as single-type defects. In oxides on (111)Si, a triplet Pb centre was found. Higher trap densities were observed for (100)Si. Defects in the Si sub-surface region modified during hydrogenation were detected in the high-frequency range of 200 kHz of the G-V curves, and were related to a stressed surface region in the Si substrate. The grown oxide is probably SiOx, x being dependant on pre-oxidation cleaning. The inter-silicon distance for hydrogenated oxides is about 3.07Å, which suggests a relaxed SiO2 structure. Hydrogenation of Si at 300oC suppresses the formation of defects. It is suggested that Si hydrogenation has the potential for surface engineering control..
Keywords
Silicon oxide, Hydrogenation, Hydrogen plasma, Interface and bulk defects.
Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009
Citation
S. ALEXANDROVA, A. SZEKERES, Nano-sized silicon oxide, thermally grown on plasma hydrogenated silicon♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1284-1287 (2009)
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