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Kh. S. KARIMOV1,2, M. M. TAHIR3, M. SALEEM4,* , R. T. M. AHMAD1, S. Z. ABBAS1
- GIK Institute of Engineering Sciences and Technology, Topi, District Swabi-23640, Pakistan
- Physical Technical Institute of Academy of Sciences, Rudaki Ave.33, Dushanbe-734025, Tajikistan
- Saint Cloud State University, 720 Fourth Avenue South, Saint Cloud, MN 56301-4498, USA
- Government College of Science, Wahdat Road, Lahore-54570, Pakistan
A semitransparent Al film of 15 nm, thin films of p-type organic semiconductor nickel phthalocynanine (NiPc) and Al film of 100 nm were deposited in sequence by vacuum evaporation on indium tin oxide (ITO) coated glass substrates. Organic transistors (OTs) were fabricated with two, metal (aluminum)–semiconductor (nickel phthalocyanine) Schottky junctions. The effect of light irradiation on their resistance was investigated. It was found that the resistance of the OTs was decreased with increase of irradiance. The energy band diagram of the transistor with two Al-NiPc junctions was developed..
Organic transistor, Nickel phthalocyanine, Metal-semiconductor Schottky junction, Light irradiation.
Submitted at: Dec. 11, 2015
Accepted at: June 7, 2017
Kh. S. KARIMOV, M. M. TAHIR, M. SALEEM, R. T. M. AHMAD, S. Z. ABBAS, Nickel phthalocynanine based organic transistor, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 5-6, pp. 347-351 (2017)
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