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Nickel phthalocynanine – metal Schottky diode as photodetector

K. S. KARIMOV1,2,* , S. A. MOIZ3, M. MAHROOF TAHIR4, N. AHMED1, R. TARIQ1, S. Z. ABBAS1, Q. ZAFAR1

Affiliation

  1. GIK Institute of Engineering Science and Technology, Topi, Swabi, N.W.F.P, Pakistan, 23640
  2. Physical Technical Institute of Academy of Sciences, Rudaki Ave.33, Dushanbe,734025, Tajikistan
  3. Faculty of Electrical Engineering, Umm-Al-Qura University, Makkah, Saudi Arabia
  4. St.Cloud State University , 720 Fourth Avenue South St.Cloud, MN 56301-4498, USA

Abstract

A thin organic film of nickel phthalocynanine (NiPc) was deposited by vacuum evaporation method onto aluminum deposited glass substrate. On the NiPc film the aluminum film was deposited as well to fabricate the structure with two Schottky barriers (Al/NiPc/Al). The Schottky junction as NiPc film with aluminum metal shows photo response under the influence of visible light irradiation. It was found that the resistance of the photodetector is varied with irradiance, NiPc thickness as well as frequency of applied voltage. It was further observed that the electrical response of the NiPC thin film decreases with increase of the frequency and with decrease of the thickness of the NiPc film. Energy band diagram of the photodetector with Al-NiPc junction was developed to explain the observed photo-response..

Keywords

Organic Photodetector, Phototransistor, Nickel Phthalocyanine, Metal-Semiconductor Schottky Junction.

Submitted at: Aug. 10, 2013
Accepted at: Nov. 13, 2014

Citation

K. S. KARIMOV, S. A. MOIZ, M. MAHROOF TAHIR, N. AHMED, R. TARIQ, S. Z. ABBAS, Q. ZAFAR, Nickel phthalocynanine – metal Schottky diode as photodetector, Journal of Optoelectronics and Advanced Materials Vol. 16, Iss. 11-12, pp. 1430-1435 (2014)