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Numerical modeling of thermo physical properties on molten Si in multi-crystalline silicon growth process

M. SRINIVASAN1,* , P. RAMASAMY1

Affiliation

  1. Department of physics, SSN College of Engineering, Chennai, India-603110

Abstract

Numerical investigation of thermal characteristics of Si melt during multi-crystalline Si growth processes like temperature distribution, velocity field, stream line, Peclet numbers and Reynolds numbers were carried out in a 2D and 3D axis symmetric model by the finite-element technique. One of the greatest technological and scientific challenges of multicrystalline silicon growth is to achieve homogeneity of the material properties in the grown crystal. It is affected by fluctuations of the growth rate of the crystal. One of the possible causes for fluctuations of the growth rate is the nonstationary convection in the melt. The aim here is to investigate the complex heat transport phenomenon existing in the Si melt during the DS growth process with three different temperature gradients. Being a non-linear process, the dimensionless numbers indicated above play vital role in parametric analysis. The simulation results in the present study indicated the existence of the flow regimes and their dependency on the temperature gradient under study. The obtained results are in reasonable agreement with the predictions of the theoretical approach. The studied dimensionless numbers will be beneficial in understanding the flow regimes during the DS process of Si..

Keywords

Heat transfer; Fluid flow; Silicon; Thermodynamics; Simulation.

Submitted at: June 28, 2014
Accepted at: March 19, 2015

Citation

M. SRINIVASAN, P. RAMASAMY, Numerical modeling of thermo physical properties on molten Si in multi-crystalline silicon growth process, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 3-4, pp. 337-342 (2015)