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Numerical modelling on melt-crystal interface and thermal stress for multi-crystalline silicon grown by directional solidification process

G. ARAVINDAN1, M. SRINIVASAN1, K. ARAVINTH1, P. RAMASAMY1,*

Affiliation

  1. SSN Research Centre, SSN College of Engineering, Chennai - 603 110, India

Abstract

Numerical simulation is employed for optimizing the Directional Solidification (DS) process. The temperature distribution, melt-crystal interface, thermal stress are investigated from the numerical simulationduring the cooling process by adjusting the heater temperature of DS furnace. Heat transfer plays an important role in the DS process which controls the thermal stress, dislocation generation and the growth rate of the mc-Si ingot. Here the heat transfer is controlled mainly by the heater temperature adjustment. Our simulation result shows that slightly convex (near to planar) melt-crystal (m-c) interface is achieved up to 0.9 K/h, after that m-c interface changes from convex to concave interface. Thermal stress and dislocation rateof mc-Si ingot are also discussed in this paper..

Keywords

Simulation, Directional Solidification Process, Multi-Crystalline Silicon, Melti-Crystal Interface, Thermal stress.

Submitted at: July 4, 2016
Accepted at: Aug. 9, 2017

Citation

G. ARAVINDAN, M. SRINIVASAN, K. ARAVINTH, P. RAMASAMY, Numerical modelling on melt-crystal interface and thermal stress for multi-crystalline silicon grown by directional solidification process, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 7-8, pp. 556-563 (2017)