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Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs)

G. ATMACA1, K. ELIBOL1, S. B. LISESIVDIN2,* , M. KASAP1, E. OZBAY2,3

Affiliation

  1. Department of Physics, Faculty of Science and Arts, Gazi University, Teknikokullar, 06500 Ankara, Turkey
  2. Nanotechnology Research Center, Bilkent University, Bilkent, 06800 Ankara, Turkey
  3. Department of Physics, Bilkent University, Bilkent, 06800 Ankara, Turkey; and Department of Electrical and Electronics Engineering, Bilkent University, Bilkent, 06800 Ankara, Turkey

Abstract

We explored the effects of the Al-mole fraction (x) of AlxGa1-xN barrier layers and the thickness of some layers on carrier densities and electron probability densities in normally-on AlGaN-GaN double-channel high electron mobility transistors. Investigations were carried out by solving non-linear Schrödinger-Poisson equations, self-consistently including polarization induced carriers that are important for GaN-based heterostructures and two-dimensional electron gas (2DEG) formation. Strain relaxation limits were also calculated, in which optimized cases were found for the investigated Al-mole fraction and thickness values under pseudomorphic limits. The effect of the investigated thickness changes on electron probability densities show no important change in the overall simulations. In addition to a carrier increase in the selected optimum cases, reasonable mobility behavior is also expected..

Keywords

AlGaN, DCHEMT, HEMT, Schrödinger, Poisson, 2DEG.

Submitted at: April 15, 2009
Accepted at: May 28, 2009

Citation

G. ATMACA, K. ELIBOL, S. B. LISESIVDIN, M. KASAP, E. OZBAY, Numerical optimization of Al-mole fractions and layer thicknesses in normally-on AlGaN-GaN double-channel high electron mobility transistors (DCHEMTs), Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 5, pp. 578-582 (2009)