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KAIKAI XU1,2,* , HAITAO LIU1, QI YU2, ZHIYU WEN1, GUANNPYNG LI3
- Defense Key Disciplines Lab of Novel Micro-nano Devices and System Technology, Chongqing University, Chongqing, China 400044
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, China 610054
- California Institute for Telecommunications and Information Technology, Irvine, CA 92697
In this paper, we discuss the emission of visible light by a monolithically integrated silicon metal-oxide-semiconductor field-effect-transistor (Si-MOSFET) in which the p-n junctions are reverse-biased. The emission of light is observed from reverse-biased p-n junction though silicon is an indirect bandgap material. In this paper new research results with regard to two- and three- terminal Si-LEDs in the p-type MOSFET device are presented. Light emission from the two devices types (1) silicon p-n junction diode (2) silicon p-n junction gate-controlled diode with the junction biased in controlled avalanche breakdown. A multi-mechanism model fitting measured spectra is presented and justified, with the conclusion that the dominant light-emission mechanism is due to a combination of avalanche breakdown and tunneling..
Emission, Silicon, Spectral analysis, Transistors.
Submitted at: July 16, 2015
Accepted at: Oct. 28, 2015
KAIKAI XU, HAITAO LIU, QI YU, ZHIYU WEN, GUANNPYNG LI, On the electrical and optical characteristics of reverse-biased silicon p-n junctions embedded in a metal-oxide-semiconductor field-effect-transistor device, Journal of Optoelectronics and Advanced Materials Vol. 17, Iss. 11-12, pp. 1680-1688 (2015)
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