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On the governed kinetics describing in-situ photodarkening in thin As-Se films

V.O. BALITSKA1,2, M.S. IOVU3, O.I. SHPOTYUK1,4,*

Affiliation

  1. Lviv State University of Vital Activity Safety 35, Kleparivska str., Lviv, 79007, Ukraine
  2. Institute of Materials, Scientific Research Company “Carat”, 202, Stryjska str., Lviv, 79031, Ukraine
  3. Center of Optoelectronics, Institute of Applied Physics, 1, Academiei str., Chisinau, MD-2028, Moldova
  4. Institute of Physics, Jan Dlugosz University, 13/15, al. Armii Krajowej, Czestochowa, 42-200, Poland

Abstract

The kinetics describing in-situ photodarkening in amorphous As100-xSex thin films for different compositions as well as for various thicknesses were studied. It was shown this kinetics strongly depended on penetration depth parameter (the inverse value of the absorption coefficient): in the case that films thickness is greater than penetration depth, the photodarkening kinetics can be described by stretched exponential function. In contrast, if film thickness is less than penetration depth, the stretched exponential relaxation kinetics tents towards simple exponential one..

Keywords

Chalcogenide glasses, Photoinduced effects, Kinetics photodarkening, Penetration depth.

Submitted at: April 20, 2012
Accepted at: July 19, 2012

Citation

V.O. BALITSKA, M.S. IOVU, O.I. SHPOTYUK, On the governed kinetics describing in-situ photodarkening in thin As-Se films, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 7-8, pp. 590-595 (2012)