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On the photo-induced shift of the optical gap in amorphous Ge6As43S35Se16 film

M. KINCL1, J. TASSEVA2, K. PETKOV2, P. KNOTEK1,3, L. TICHY1,*

Affiliation

  1. Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry, Academy of Sciences of Czech Republic, Prague and University of Pardubice, Czech Republic
  2. Central Laboratory of Photoprocesses, Bulgarian Academy of Sciences, Acad. G. Bonchev ST., bl. 109, 1113 Sofia, Bulgaria
  3. University of Pardubice, Faculty of Chemical Technology, Studentska 84, 532 10 Pardubice, Czech Republic

Abstract

In virgin Ge6As43S35Se16 amorphous film with the optical gap at around 2.06 eV we observed an absence of photo-induced optical gap shift induced by white light illumination. However, we found red shift of the optical gap induced by illumination with over-gap photons with energy 2.254 eV. This red shift is erased by illumination of the darkened state of the film with sub-gap photons, with energy 1.907 eV. It is supposed that simultaneous action of over-gap photons and sub-gap photons, present in white light, is responsible for apparent insensitiveness of the optical gap to illumination using white light..

Keywords

Amorphous chalcogenide film, Photo-darkening, Photo-bleaching.

Submitted at: Feb. 2, 2009
Accepted at: April 28, 2009

Citation

M. KINCL, J. TASSEVA, K. PETKOV, P. KNOTEK, L. TICHY, On the photo-induced shift of the optical gap in amorphous Ge6As43S35Se16 film, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 4, pp. 395-398 (2009)