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On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 Ǻ insulator layer thickness

M. YILDIRIM1,* , , A. EROĞLU2, Ş. ALTINDAL2, P. DURMUŞ2

Affiliation

  1. Department of Physics, Faculty of Arts and Sciences, Düzce University, 06500 Düzce,Turkey
  2. Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500 Ankara,Turkey

Abstract

In this study, the temperature and voltage dependence of interface states (Nss) and resistance profile of Au/n-Si structure with 79 Ǻ insulator layer thickness were obtained from the forward and reverse bias capacitance-voltage (C-V) and conductance-voltage (G/ω-V) measurements in the temperature range of 80-400 K at 1 MHz. The main electrical parameters, such as doping concentration (ND), Fermi energy level (EF), depletion layer width (WD) and barrier height (ΦCV), of these structures were also determined from the reverse bias C-2 vs V plots in the same range. The values of ΦCV at the absolute temperature (T=0 K) and the temperature coefficient (α) of barrier height were found as 1.152 eV and -2.4x10-4 eV/K, respectively. These values are in a close agreement with the bandgap value of Si at 0 K (Eg=1.17 eV) and its temperature coefficient value (-4.73x10-4 eV/K). C-V plots for all temperature levels show an anomalous peak in the accumulation region because of the effect of series resistance (Rs). Similarly, G/ω-V plots also show a peak in the depletion region between the temperature range of 160-320 K. The effect of Rs on the C and G is found noticeable especially at high temperatures. Therefore, the measured C and G values were corrected in order to eliminate the effect of Rs using Nicollian and Brews method. In addition, the temperature dependent ac conductivity (σac) data obtained between 200 and 400 K show a linear behavior and was fitted to the Arrhenius plot. The values of activation energy (Ea) obtained from the slope ln-q/kT plots are 21.7, 18.5, 15.0 and 11.5 meV for the values of applied biases 3.5, 4.0, 4.5 and 5.0 V, respectively..

Keywords

MS structure with insulator layer, Temperature dependent barrier height, Voltage dependent resistance, Interface states, Anomalous peak in C-V plots.

Submitted at: Oct. 25, 2010
Accepted at: Jan. 26, 2011

Citation

M. YILDIRIM, , A. EROĞLU, Ş. ALTINDAL, P. DURMUŞ, On the profile of temperature and voltage dependence of interface states and resistivity in Au/n-Si structure with 79 Ǻ insulator layer thickness, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 1, pp. 98-105 (2011)