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OPO laser light absorption and evolutionary behaviour of SWCNT thin films

D. KEPIĆ1, Z. MARKOVIĆ1,* , I. HOLCLAJTNERANTUNOVIĆ2, M. NIKOLIĆ1, M. DRAMIĆANIN1, M. MARINOVIĆ CINCOVIĆ1, B. TODOROVIĆ MARKOVIĆ1

Affiliation

  1. Vinča Institute of Nuclear Sciences, University of Belgrade, Mike Alasa 12-14, 11001 Belgrade, Serbia
  2. Faculty of Physical Chemistry, University of Belgrade, Studentski trg 12-16, 11000 Belgrade, Serbia

Abstract

In this paper we report a systematic study on the properties of irradiated SWCNT films by high power, pulsed visible irradiation of OPO laser in the range from 430 nm to 800 nm. Raman analysis showed that metallic and semiconducting SWCNTs were simultaneously affected by irradiation. It was found that laser irradiation had the most prominent effects on SWCNT films at 430 nm wavelength. To our surprise, semiconducting SWCNTs were more affected by irradiation than metallic and as a result several SWCNTs were isolated partially..

Keywords

SWCNT, OPO laser, Raman spectroscopy, Atomic force microscopy.

Submitted at: Sept. 15, 2011
Accepted at: Feb. 20, 2012

Citation

D. KEPIĆ, Z. MARKOVIĆ, I. HOLCLAJTNERANTUNOVIĆ, M. NIKOLIĆ, M. DRAMIĆANIN, M. MARINOVIĆ CINCOVIĆ, B. TODOROVIĆ MARKOVIĆ, OPO laser light absorption and evolutionary behaviour of SWCNT thin films, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 1-2, pp. 95-99 (2012)