"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Optical and electrical characterization of amorphous Si/Ge Layers

G. A. M. AMIN1

Affiliation

  1. NCRRT, P.O. Box 8029-Nasr City, Cairo, Egypt

Abstract

This work reports on the characterization of Si and Ge layers deposited one after another using thermal deposition technique. The I-V characteristics of the Si/Ge samples were studied at different temperatures. The electrical resistance decreases with temperature in the range from 290K to 355K. The activation energy for electrical conduction was 0.31 eV. The temperature coefficient of resistance (TCR) was calculated for different temperatures and it was between 0.028 K-1 and 0.043 K-1 . Optical absorption was measured for the Si/Ge samples and used to study the optical characteristics. γ-irradiation induced effect on optical absorption of Si/Ge samples kept at room temperature was also investigated. The absorption coefficient increases up to a dose of 15 kGy, further increase of the irradiation dose leads to an opposite behavior. Optical energy gap was found to decrease as a result of γ-irradiation up to a dose of 15 kGy and starts to increase for higher doses..

Keywords

Amorphous, Semiconductors, SiGe, Thin films, γ-irradiation, Optical materials.

Submitted at: March 21, 2011
Accepted at: May 25, 2011

Citation

G. A. M. AMIN, Optical and electrical characterization of amorphous Si/Ge Layers, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 5, pp. 575-578 (2011)