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Optical and electrical properties of bismuth sulphide thin film prepared in PVA matrix by chemical drop method

A. HUSSAIN1, A. BEGUM1, A. RAHMAN1,*

Affiliation

  1. Department of Physics, Gauhati University, Guwahati- 781014, India

Abstract

Nanocrystalline Bi2S3 thin films were prepared by chemical drop method using polyvinyl Alcohol (PVA) as a matrix solution. Characterization of the films was carried out using X-ray diffraction (XRD), Scanning electron microscopy (SEM), optical absorption, composition analysis and electrical conductivity measurement. According to XRD spectra the deposited films were pure orthorhombic and sizes of the particles obtained were between 3-10nm. Surface morphology and particles sizes were also known from SEM images. Composition was also known from EDAX. The band gap obtained from the absorption spectra was found to change from 3.88 eV to 3.82 eV on changing the grain size from 3nm to 10nm. The absorption edge obtained from the spectra was found to shift towards the lower wavelength. The electrical conductivity at room temperature was found to be in the range 10-6Ω-1m-1..

Keywords

Semiconductors, Chemical synthesis, Electrical conductivity.

Submitted at: March 12, 2010
Accepted at: May 26, 2010

Citation

A. HUSSAIN, A. BEGUM, A. RAHMAN, Optical and electrical properties of bismuth sulphide thin film prepared in PVA matrix by chemical drop method, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 5, pp. 1019-1023 (2010)