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YINGZHUO SHENG1,2, JUNQIANG QIAO1,1,* , ZHENXING ZHANG2,*
- Key Laboratory of Photovoltaic, Gansu Province, Gansu Natural Energy Research Institute, Gansu Academy of Sciences, Lanzhou 730000, China
- Key Laboratory of Special Function Materials and Structure Design of the Ministry of Education, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Educatio
Indium sulfide thin films were prepared by radio-frequency sputtering. The as-prepared films are amorphous independent of the sputtering power and growth times. The subsequent annealing effect on the crystallinity, optical properties, and photoelectric conversion properties was investigated. The annealed films are β-In2S3, and their indirect optical band gaps are from 2.04 to 2.20 eV as the annealing temperature increases from 300 °C to 500 °C. The photovoltaic conversion of the In2S3/Si heterostructure is also demonstrated..
Indium sulfide, Sputtering, Annealing, Photovoltaics, Thin film.
Submitted at: Jan. 11, 2021
Accepted at: Nov. 24, 2021
YINGZHUO SHENG, JUNQIANG QIAO, ZHENXING ZHANG, Optical and electrical properties of indium sulfide thin film prepared by magnetron sputtering, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 11-12, pp. 574-578 (2021)
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