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B. MERABET1,1, O. M. OZKENDIR2, A. S. HASSANIEN3,4, M. A. MALEQUE5,*
- Faculty of Sciences and Technology, Mustapha Stambouli University, Mascara 29000, Algeria
- Dept of Natural and Mathematical Sciences, Faculty of Engineering, Tarsus University, Turkey
- Faculty of Engineering at Shoubra - Cairo Benha university, Egypt
- Faculty of Science and Humanities, Afif, Shaqra University, Saudi Arabia
- Faculty of Engineering, International Islamic University Of Malaysia (IIUM), Malaysia
Lead chalcogenides (LCs) exhibit non-stability and lower device efficiency due to smaller bandgap (Eg) leading to poor optical properties for photovoltaic (PV) applications. In this work, optical properties of transition metals (TMs) such as (Mn and Fe) co-doped with LCs especially PbS in the framework of DFT+U (8 eV) and L/APW+lo method are theoretically investigated to predict new optical material for photovoltaic and other optoelectronics applications. The XAFS spectroscopy technique was used to analyze electronic structures and optical properties of (Mn, Fe) co-doped LCs. Midgap states of co-doped PbS reveal to improve the absorption of infrared light mainly due to slight doping with TMs. Compared to pure PbS, Mn doping in PbS induces Eg widening, blue-shift, and improve the light absorption edge. Due to co-doping, the magnetic order is translated that can lead to forming a charge compensated system which is beneficial to minimize vacancies related to defects formation..
Lead chalcogenides, (Mn, Fe) co-doping, Optical property, Light absorption edg.
Submitted at: Jan. 19, 2021
Accepted at: Nov. 24, 2021
B. MERABET, O. M. OZKENDIR, A. S. HASSANIEN, M. A. MALEQUE, Optical and structural characterization of (Mn, Fe) co- doped lead chalcogenides for optoelectronics applications, Journal of Optoelectronics and Advanced Materials Vol. 23, Iss. 11-12, pp. 564-573 (2021)
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