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Optical models for ellipsometric characterization of high temperature annealed nanostructured SiO2 films♣

T. LOHNER1, A. SZEKERES2,* , T. NIKOLOVA2, E. VLAIKOVA2, P. PETRIK1, G. HUHN3, K. HAVANCSAK3, I. LISOVSKYY4, S. ZLOBIN4, I. Z. INDUTNYY4, P. E. SHEPELIAVYI4

Affiliation

  1. Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Konkoly Thege Miklós út 29-33, H-1121 Budapest, Hungary
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72, Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
  3. Eotvos Lorand University, Department of Materials Physics, Pazmany Peter setany 1/A, 1117 Budapest, Hungary
  4. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Prospekt Nauki 45, Kiev 252028, Ukraine

Abstract

Silicon oxide films, vacuum evaporated and annealed in Ar atmosphere at temperatures of 1000 and 1100ºC have been studied by spectroscopic ellipsometry. By the Bruggeman effective-medium approximation, different optical models have been applied for characterization of the nanostructured SiOx films. The results showed that during annealing at 1000oC, Si clusters were formed in the sub-stoichiometric SiO1.61 matrix, which crystallized in nanocrystallites with a volume fraction of ~ 14 %. Annealing at 1100oC transformed the oxide structure to stoichiometric SiO2 and created 22% nanocrystalline Si inclusions. A silicon dioxide top layer existed in all films, the thickness of which varied with the technological steps and was well correlated with the surface roughness obtained from the AFM imaging..

Keywords

Vacuum evaporation, Silicon oxides, nc-Si clusters, Spectral ellipsometry and modelling.

Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009

Citation

T. LOHNER, A. SZEKERES, T. NIKOLOVA, E. VLAIKOVA, P. PETRIK, G. HUHN, K. HAVANCSAK, I. LISOVSKYY, S. ZLOBIN, I. Z. INDUTNYY, P. E. SHEPELIAVYI, Optical models for ellipsometric characterization of high temperature annealed nanostructured SiO2 films♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1288-1291 (2009)