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Optical properties of AsSeTl thin films deposited by e-beam evaporation

M. M. ABD EL-RAHEEM1,*

Affiliation

  1. Physics Department, Faculty of Science, Sohag University, 82524 Sohag, Egypt Current address: Physics Department, faculty of science, El-Taif university, 888 Taif, Saudi Arabia

Abstract

Five compositions of the system As25Se75-xTlx (x = 12, 16, 20, 24 and 28%) have been prepared using melt quenching technique. Thin films of the thickness (200 nm) were deposited by electron beam evaporation. Optical and other parameters of the films have been determined. The optical band gap Eop was found to decrease with increasing both of the coordination number r and the average number of bonds per atom Nav and with decreasing the heat of atomization Hs. The width of the band tails of the localized states in the band gap Ee increases with increasing thallium ratio. Other parameters such as the oscillator energy Eo, dispersion energy Ed and plasma frequency ωp have been determined..

Keywords

Optical gap, Coordination number, Heat of atomization, Dispersion energy, Plasma frequency.

Submitted at: March 8, 2009
Accepted at: April 28, 2009

Citation

M. M. ABD EL-RAHEEM, Optical properties of AsSeTl thin films deposited by e-beam evaporation, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 4, pp. 408-413 (2009)