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I agree, do not show this message again.Optical properties of Er-doped GeS2-Ga2S3 glasses♣
Z. G. IVANOVA1,* , M. JAYASIMHADRI2, M. KINCL3
Affiliation
- Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria
- Changwon National University, Department of Physics, Changwon 641-773, South Korea
- Joint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry, Academy of Sciences, Czech Republic and University of Pardubice, 84 Studentská, 53210 Pardubice, Czech Republic
Abstract
Erbium doped chalcogenide glasses are of great interest in integrated optoelectronics technology, due to their Er3+ intra-4f emission at the standard telecommunication wavelength of 1.54 μm. In this report, the optical absorption and photoluminescence (PL) of chalcogenide (GeS2)80(Ga2S3)20 glasses doped with 0.6 and 1.8 mol % Er2S3 have been evaluated. The role of the excitation wavelength on the emission cross section at ~ 1540 nm, attributed to the 4 I13/2 → 4 I15/2 transition of the Er3+ ion, has been specified, and basic optical properties have been determined. For this purpose, the Judd-Ofelt (J-O) theory has been applied to calculate the intensity Ωλ parameters. Consequently, radiative properties such as the radiative transition probabilities (AR), the total radiative transition probabilities (AT) and the radiative lifetimes (τR) have been determined. In particular, the present glasses have exhibited relatively high τR values, of about 3.4 ms. The influence of the Er-doping level on the PL line-shape at ~1540 nm has been specified by such spectroscopic parameters as the full width at half maximum and the stimulated emission cross-section (σe) for the 4 I13/2→4 I15/2 transition..
Keywords
Glasses, Optical properties, Luminescence, Judd-Ofelt theory.
Submitted at: Nov. 5, 2008
Accepted at: Sept. 9, 2009
Citation
Z. G. IVANOVA, M. JAYASIMHADRI, M. KINCL, Optical properties of Er-doped GeS2-Ga2S3 glasses♣, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 9, pp. 1269-1172 (2009)
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