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Optical properties of phase change memory Ge1Sb2Te4 glasses

M. S. IOVU1,2,* , E. P. COLOMEICO1, V. G. BENEA1, M. POPESCU3,2, A. LORINCZI3,2, A. VELEA3,2

Affiliation

  1. Institute of Applied Physics, ASM, Str. Academiei 5, MD-2028 Chisinau, R. Moldova
  2. “Horia Hulubei” Foundation, Bucharest-Magurele, P.O.Box MG-5, Romania
  3. National Institute for Material Physics, Bucharest-Magurele, Atomistilor Str. 1, P.O.Box MG-7, Romania

Abstract

Phase change memory materials are promising for the next-generation of non-volatile flash memory that will serve in new mobile computing, entertainment and other handheld electronics. Among them are chalcogenide glasses Ge-Sb-Te (GST) which can exist in two separates structural states – amorphous and cristalline. Switching of the material from one to another state can be done by heating applying an electrical pulse or by exposure to intense laser beam. We report the changes of optical parameters of amorphous Ge1Sb2Te4 films under heat treatment and light exposure..

Keywords

Phase change memory materials, Optical properties, Refractive index.

Submitted at: June 14, 2011
Accepted at: Nov. 23, 2011

Citation

M. S. IOVU, E. P. COLOMEICO, V. G. BENEA, M. POPESCU, A. LORINCZI, A. VELEA, Optical properties of phase change memory Ge1Sb2Te4 glasses, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 11-12, pp. 1483-1486 (2011)