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Optoelectronic system for monitoring of thin diamond layers growth

R. BOGDANOWICZ1,* , M. GNYBA1, P. WROCZYŃSKI1, B. B. KOSMOWSKI1

Affiliation

  1. Department of Optoelectronics and Electronic Systems, Gdansk University of Technology, Narutowicza Street 11/12, 80-952 Gdansk, Poland

Abstract

Development of the optoelectronic system for monitoring of diamond/DLC (Diamond-Like-Carbon) thin films growth during μPA ECR CVD (Microwave Plasma Assisted Electron Cyclotron Resonance Chemical Vapour Deposition) process is described. The multi-point Optical Emission Spectroscopy (OES) and Raman spectroscopy were employed as non-invasive optoelectronic tools. Dissociation of H2 molecules, excitation and ionization of hydrogen atoms as well as spatial distribution of the molecules became subjects of the OES investigation. The most significant parameters of the deposited film like molecular composition of the film (ratio of diamond sp3, graphite sp2 and amorphous phases), presence of defects and rate of the film growth can be investigated by means of Raman spectroscopy. Modular Raman system for in-situ monitoring of the film growth, equipped with fibre probes, was designed. Investigation with use of optoelectronic tools provides important data about CVD process progress as well as enables optimization of DLC synthesis parameters and improvement of synthesized films quality..

Keywords

Diamond/diamond-like-carbon layers, Optical emission spectroscopy, Raman spectroscopy, In-situ monitoring.

Submitted at: Aug. 21, 2008
Accepted at: Aug. 12, 2010

Citation

R. BOGDANOWICZ, M. GNYBA, P. WROCZYŃSKI, B. B. KOSMOWSKI, Optoelectronic system for monitoring of thin diamond layers growth, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 8, pp. 1660-1665 (2010)