"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Oscillator strength of quantum transition in multi-shell quantum dots with impurity

V. A. HOLOVATSKY1,* , I. B. FRANKIV1

Affiliation

  1. Chernivtsi National University, Chernivtsi, Ukraine

Abstract

The theoretical investigation of the oscillator strength of inter-band transition is performed using the variational method and effective mass approximation. The energies and wave functions of the electron and hole ground states are calculated as functions of the position of hydrogen-like donor impurity in multi-shell spherical quantum dots: ZnS/CdS/SiO2 and CdS/ZnS/CdS/SiO2. It is shown that the position of impurity strongly influences on the distribution of probability density of electron and hole location in nanostructure and on the oscillator strength as well. It is proven that the maximal influence of impurity on the intensity of inter-band quantum transitions in multi-shell quantum dots is observed when it is located inside of the potential wells. Electron and hole locations are determined both by the sizes of the wells and position of the impurity. The external charges essentially affect at the intensities of inter-band quantum transition..

Keywords

Quantum-dot-quantum-well, Oscillator strength, Impurity.

Submitted at: Sept. 25, 2012
Accepted at: Feb. 20, 2013

Citation

V. A. HOLOVATSKY, I. B. FRANKIV, Oscillator strength of quantum transition in multi-shell quantum dots with impurity, Journal of Optoelectronics and Advanced Materials Vol. 15, Iss. 1-2, pp. 88-93 (2013)