"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

Passivation of yellow luminescence defects in GaN film by annealing and CF4 plasma treatment

HSIANG CHEN1,* , CHYUAN-HAUR KAO2, YI-CHEN CHEN1, HONG-KAI LO1, YIH-MIN YEH3, TIEN-CHANG LU4, HUEI-MIN HUANG4, CHAO-SUNG LAI2

Affiliation

  1. National Chi Nan University, Puli, Taiwan, ROC
  2. Chang Gung University, Kwei-Shan, Taiwan, ROC
  3. Wu-Feng University, Min-Hsiung, Taiwan, ROC
  4. National Chiao Tung University, Hsin-Chu, Taiwan, ROC

Abstract

In this study, we demonstrated that yellow luminescence (YL) defects can be mitigated with proper annealing or CF4 plasma treatment. Multiple material analyses, including X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and surface roughness measurements were performed to investigate improvements in GaN film material properties caused by annealing and CF4 plasma treatment. Filling vacancies during the annealing process and incorporating fluorine atoms to bond with dangling bonds during the plasma treatment process may lessen YL defects and decrease YL luminescence..

Keywords

GaN, yellow luminescence defect, Annealing, Plasma treatment, Chemical bonding.

Submitted at: May 9, 2011
Accepted at: Aug. 10, 2011

Citation

HSIANG CHEN, CHYUAN-HAUR KAO, YI-CHEN CHEN, HONG-KAI LO, YIH-MIN YEH, TIEN-CHANG LU, HUEI-MIN HUANG, CHAO-SUNG LAI, Passivation of yellow luminescence defects in GaN film by annealing and CF4 plasma treatment, Journal of Optoelectronics and Advanced Materials Vol. 13, Iss. 8, pp. 973-975 (2011)