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Performance enhancement of crystalline quality and optical properties of GaN epilayer grown on patterned sapphire substrate

DANG-HUI WANG1,* , TIAN-HAN XU1, FANG CHEN1

Affiliation

  1. College of Materials Science & Engineering of Xi’an Shiyou University, Xi’an 710065, China

Abstract

In this study we have investigated optical properties of GaN epilayer grown on cone-patterned and planar c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) respectively. High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM), photoluminescence (PL) and Raman scattering measurements have been employed to study the crystal quality, surface morphology, optical properties and residual strain of GaN epifilms. Conclusions reveal that epitaxial films grown on patterned sapphire substrate can improve the crystal quality, enhance the surface morphology, and reduce the threading dislocation density. The mechanisms of growing on cone-patterned sapphire substrate to enhance the optical properties of GaN epifilms discussed from the viewpoint of residual strain state in this paper..

Keywords

Metal-organic chemical vapor deposition, Optical properties, Patterned sapphire substrate, Light-emitting diodes.

Submitted at: Oct. 22, 2016
Accepted at: Aug. 9, 2017

Citation

DANG-HUI WANG, TIAN-HAN XU, FANG CHEN, Performance enhancement of crystalline quality and optical properties of GaN epilayer grown on patterned sapphire substrate, Journal of Optoelectronics and Advanced Materials Vol. 19, Iss. 7-8, pp. 517-521 (2017)