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H. JIA1, H. ZHANG1, S. CHENG1,* , J. YU1, Y. LAI1
- College of Physics and Information Engineering, and Institute of Micro-Nano Devices and Solar Cells,Fuzhou University, Fuzhou, 350108, P. R. China Jiangsu Collaborative Innovation Center of Photovolat
Cu2SnS3 (CTS) thin films were grown by sulfurization of vacuum thermal evaporated Sn-Cu metallic precursors in a H2S:N2 atmosphere. Different Cu/Sn composition ratios of the films were prepared to study the effect of Cu/Sn atomic ratio on the properties of the CTS thin films. The microstructures and Cu/Sn composition ratios of the films were characterized with X-ray diffraction and energy dispersive X-ray spectroscopy (EDS), respectively. The X-ray diffractograms show that the deposited films are exclusively oriented along the (111) direction. The optical absorption coefficient and band gap of the films were estimated by transmission and reflection spectra measured at room temperature. Highly crystallized p-type CTS thin films were achieved when the Cu/Sn ratio was about 2.0. They had high absorption coefficient of ~104 cm-1, suitable carrier concentration ~1017 cm-3, high mobility ~100 cm2 v-1s -1 and narrow optical band gap ~0.9 eV. Therefore, CTS thin films are suitable as absorber materials of thin film solar cells..
Thermal evaporated, Cu2SnS3 thin film, Two-stage process, Cu/Sn ratio, Solar cell material, Absorber layer, p-type semiconductor.
Submitted at: May 21, 2015
Accepted at: Sept. 29, 2016
H. JIA, H. ZHANG, S. CHENG, J. YU, Y. LAI, Performance studies on Cu2SnS3 films grown by sulfurization of evaporated Sn-Cu stack precursors, Journal of Optoelectronics and Advanced Materials Vol. 18, Iss. 9-10, pp. 863-867 (2016)
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