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Phase-change annealing effects on electrical and optical properties of tin oxide thin films

V. S. SENTHIL SRINIVASAN1, M. K. PATRA2, V. S. CHOUDHARY2, M. MATHEW2, A. PANDYA2,*

Affiliation

  1. Center of Excellence in Nanoelectronics, Indian Institute of Technology Bombay, Powai, Mumbai-400076, India.
  2. Defence Laboratory, Defence R&D Organisation, Ratanada Palace, Jodhpur, Rajasthan-342011, India.

Abstract

The change from tetragonal to orthorhombic phase due to annealing also changes the electrical and optical properties of tin oxide thin films. X-ray diffraction and Atomic force microscopy studies reveal the changes in the phase and grain merger with annealing of as-grown tin oxide thin films. Optical bandgap increase with annealing confirms the improvement in the quality of film transparency. Electrical conductivity also shows an increasing trend with annealing. Parameters such as activation energy, optical bandgap, average roughness, and extinction coefficient have been determined and interpreted with respect to annealing..

Keywords

Electron-beam evaporation, Thin films, Annealing, Tin oxide, Orthorhombic, Phase change, Atomic Force Microscopy, Activation energy..

Submitted at: March 9, 2010
Accepted at: July 14, 2010

Citation

V. S. SENTHIL SRINIVASAN, M. K. PATRA, V. S. CHOUDHARY, M. MATHEW, A. PANDYA, Phase-change annealing effects on electrical and optical properties of tin oxide thin films, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 7, pp. 1485-1489 (2010)