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Phase locked second and third harmonic localization in semiconductor cavities

V. ROPPO1,2, C. COJOCARU1, G. D’AGUANNO2, F. RAINERI3,4, J. TRULL1, Y. HALIOUA3,5, R. VILASECA1, R. RAJ3, M. SCALORA1

Affiliation

  1. Universitat Politècnica de Catalunya, Dept. de Física i Eng. Nuclear, Colom 11, 08222 Terrassa, SPAIN
  2. C. M. Bowden Research Facility, US Army, RDECOM, Redstone Arsenal, AL 35803, USA
  3. Laboratoire de Photonique et de Nanostructures (CNRS), Marcoussis, FRANCE
  4. Université Paris-Diderot, 75205 Paris Cedex 13, FRANCE
  5. Ghent University-IMEC, Depart. of Information Technology- Sint-Pietersnieuwstraat 41, 9000 Gent, BELGIUM

Abstract

We study the enhancement of the second and third harmonic generation using ultra short pulses in a cavity environment, focusing on the role of the phase locking phenomena. Despite the fact that the cavity is only resonant at the fundamental frequency and the harmonics are tuned in a spectral range of huge nominal absorption, we predict and experimentally observe the harmonics become localized inside the cavity leading to relatively large conversion efficiencies. This unique behavior reveals new optical phenomena and new applications for opaque nonlinear materials (i.e. semiconductors) in the visible and UV ranges..

Keywords

Nonlinear optics, Harmonics generation, Semiconductor.

Submitted at: Dec. 15, 2009
Accepted at: Jan. 20, 2010

Citation

V. ROPPO, C. COJOCARU, G. D’AGUANNO, F. RAINERI, J. TRULL, Y. HALIOUA, R. VILASECA, R. RAJ, M. SCALORA, Phase locked second and third harmonic localization in semiconductor cavities, Journal of Optoelectronics and Advanced Materials Vol. 12, Iss. 1, pp. 57-62 (2010)