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Phase separation due to high temperature annealing of sputtered SiOx layers

N. KARPOV1, V. VOLODIN1,2, J. JEDRZEJEWSKI3, E. SAVIR3, I. BALBERG3, Y. GOLDSTEIN3,* , T. EGEWSKAYA2, N. SHWARTZ2, Z. YANOVITSKAYA2

Affiliation

  1. Novosibirsk State University, 630090, Novosibirsk, Russia
  2. Institute of Semiconductor Physics of SB RAS, av. Lavrenteva 13, 630090, Novosibirsk, Russia
  3. Racah Institute of Physics, The Hebrew University, Jerusalem 91904 Israel

Abstract

SiOx layers with lateral composition gradient (co-layers), formed by co-sputtering in argon plasma from Si and SiO2 targets, were investigated both before and after high temperature annealing using IR absorption and Raman scattering. For all coordinates we found more oxygen in the co-layers than the oxygen amount in SiO2 layers sputtered from quartz target only. It was found that the quartz target surface in the plasma heats up and this may result in oxygen and silicon monoxide fluxes. The capture of this additional oxygen by the silicon flux during co-sputtering may be the reason for the excess oxygen in the co-layers. For samples with low silicon content (x>1), upon annealing a complete phase separation of SiOx into SiO2 and Si takes place. In SiOx films with high Si content some of the silicon is in the crystalline phase even before annealing..

Keywords

Si-SiOx system, Sputtering, Si nanoparticles, Infrared spectroscopy.

Submitted at: Feb. 10, 2009
Accepted at: May 28, 2009

Citation

N. KARPOV, V. VOLODIN, J. JEDRZEJEWSKI, E. SAVIR, I. BALBERG, Y. GOLDSTEIN, T. EGEWSKAYA, N. SHWARTZ, Z. YANOVITSKAYA, Phase separation due to high temperature annealing of sputtered SiOx layers, Journal of Optoelectronics and Advanced Materials Vol. 11, Iss. 5, pp. 625-634 (2009)