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Phonon bound state and critical limit of soliton motion in ferroelectrics

A. BISWAS1, K. CHOUDHARY1, A. K. BANDYOPADHYAY1,2,* , .K. BHATTACHARJEE3, D. MANDAL3

Affiliation

  1. Dumkal Institute of Engineering & Technology, W. B. University of Technology, Dumkal, Dist: Murshidabad, India
  2. Calcutta Institute of Engg. & Management, W.B. University of Technology, 24/1A C G Road, Kolkata-700040, India
  3. Dept. of Electronics and Communication Engineering, N. I. T., Durgapur West Bengal-713209, India

Abstract

In the continuum limit of our discrete Hamiltonian, nonlinear Klein-Gordon equation was derived that gave rise to slower tanh and faster sech soliton solutions while doing the stability analysis as a function of both spatial (x) and time (t) variables. For these solitons a critical field was worked out at non-zero polarization and field so that the soliton motion can prevail in the ferroelectric devices. This non-dimensional critical field gives rise to the applied field (Emax) for a nano device of 100 nm thickness that shows interesting behavior against Landau coefficient, which depends on impurity contents. Again, in the discrete case, discrete breathers have been observed due to nonlinearity. Hence, to investigate the above phenomenon in nano-devices, we take two-phonon bound states, i.e. quantum route and calculate various parameters, which when plotted against Landau coefficient for various Emax shows a transition behavior around a particular impurity content indicating easier switching hitherto not done. This new approach reveals an interesting aspect for nanoelectronic device manufacture based on ferroelectrics..

Keywords

Phonon Bound State, Critical Soliton Motion, Ferroelectrics.

Submitted at: June 5, 2011
Accepted at: Sept. 20, 2012

Citation

A. BISWAS, K. CHOUDHARY, A. K. BANDYOPADHYAY, .K. BHATTACHARJEE, D. MANDAL, Phonon bound state and critical limit of soliton motion in ferroelectrics, Journal of Optoelectronics and Advanced Materials Vol. 14, Iss. 9-10, pp. 732-740 (2012)